Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substratesKIM, Byung-Jae; KIM, Hong-Yeol; KIM, Jihyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 205-207, issn 0022-0248, 3 p.Conference Paper

Liquid Slip on a Nanostructured SurfaceDOO JIN LEE; KI YEON CHO; JANG, Soohwan et al.Langmuir. 2012, Vol 28, Num 28, pp 10488-10494, issn 0743-7463, 7 p.Article

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility TransistorsDOUGLAS, E. A; CHANG, C. Y; PEARTON, S. J et al.Microelectronics and reliability. 2012, Vol 52, Num 1, pp 23-28, issn 0026-2714, 6 p.Conference Paper

Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction deviceTSAI, Shu-Yi; HON, Min-Hsiung; LU, Yang-Ming et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 85-89, issn 0022-0248, 5 p.Conference Paper

Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaNSONG, Keun-Man; KIM, Jong-Min; LEE, Dong-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 135-139, issn 0022-0248, 5 p.Conference Paper

Luminous properties of Sr_1-xZn_xSe:Eu²⁺ phosphors for LEDs applicationHONG JEONG YU; CHUNG, Wonkeun; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 77-80, issn 0022-0248, 4 p.Conference Paper

Photoluminescence and structural properties of Ca₃Y(VO₄)₃: RE³⁺ (=Sm³⁺, Ho³⁺ and Tm³⁺) powder phosphors for tri-colorsVENGALA RAO BANDI; BHASKAR KUMAR GRANDHE; JAYASIMHADRI, M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 120-123, issn 0022-0248, 4 p.Conference Paper

Spontaneous formation of GaN nanostructures by molecular beam epitaxyKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 191-194, issn 0022-0248, 4 p.Conference Paper

Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphireLEE, Sung-Nam; KIM, Jihoon; KIM, Hyunsoo et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 19-22, issn 0022-0248, 4 p.Conference Paper

Growth of p-CdTe thin films on n-GaN/sapphireJUNG, Younghun; CHUN, Seunju; KIM, Donghwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 69-72, issn 0022-0248, 4 p.Conference Paper

Photo-enhanced chemical etched GaN LED on silicon substrateKIM, Hong-Yeol; MASTRO, Michael A; HITE, Jennifer et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 58-61, issn 0022-0248, 4 p.Conference Paper

Structural properties of the epitaxial CuCr_0.95Mg_0.05O₂ thin films on c-plane sapphire substrates by pulsed laser depositionKIM, Se-Yun; SUNG, Sang-Yun; JO, Kwang-Min et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 9-13, issn 0022-0248, 5 p.Conference Paper

Synthesis and luminescence properties of cinnamide based nanohybrid materials containing Eu (II) ionsKIRAN KUMAR, A. B. V; JAYASIMHADRI, M; CHA, Hyeongrae et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 128-134, issn 0022-0248, 7 p.Conference Paper

Fabrication of p-n junctions in as-grown ZnMgO/ZnO filmsHYUCK SOO YANG; LI, Y; NORTON, D. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59411P.1-59411P.7, issn 0277-786X, isbn 0-8194-5946-1, 1VolConference Paper

Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond): Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM - Korea 2010)FREITAS, Jaime A; KIM, Jihyun; JONG KYU KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, issn 0022-0248, 221 p.Conference Proceedings

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol-gel processJUN HYUK CHOI; SOO MIN HWANG; CHANG MIN LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 175-178, issn 0022-0248, 4 p.Conference Paper

Effect of cathodes on high efficiency inorganic-organic hybrid LEDs based on CdSe/ZnS quantum dotsNGUYEN HUU TUAN; KEN HA KOH; PHAM THU NGA et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 109-112, issn 0022-0248, 4 p.Conference Paper

Electrical and optical characterization of GaN micro-wiresJUNG, Younghun; AHN, Jaehui; MASTRO, Michael A et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 81-84, issn 0022-0248, 4 p.Conference Paper

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO filmsLEE, Jaehyung; LIM, Donggun; YANG, Keajoon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 50-57, issn 0022-0248, 8 p.Conference Paper

Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal methodMIN SU KIM; KWANG GUG YIM; JOO IN LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 195-199, issn 0022-0248, 5 p.Conference Paper

Selective and nonselective wet etching of Zn_0.9Mg_0.1O/ZnOCHEN, Jau-Jiun; JANG, Soohwan; REN, F et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 516-519, issn 0361-5235, 4 p.Article

Si-diffused GaN for enhancement-mode GaN MOSFET on Si applicationsJANG, Soohwan; REN, F; LAHRECHE, H et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 685-690, issn 0361-5235, 6 p.Article

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stressDOUGLAS, E. A; CHANG, C. Y; KIM, Jinhyung et al.Microelectronics and reliability. 2011, Vol 51, Num 2, pp 207-211, issn 0026-2714, 5 p.Conference Paper

Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard-brittle materials used in light-emitting diodesLEE, Hyunseop; KASUGA, Hiroshi; OHMORI, Hitoshi et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 140-146, issn 0022-0248, 7 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper